The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Jan. 25, 2016
Micron Technology, Inc., Boise, ID (US);
Sanh D. Tang, Boise, ID (US);
Kamal M. Karda, Boise, ID (US);
Wolfgang Mueller, Garden City, ID (US);
Sourabh Dhir, Boise, ID (US);
Robert Kerr, Boise, ID (US);
Sangmin Hwang, Boise, ID (US);
Haitao Liu, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
An array of recessed access gate lines includes active area regions having dielectric trench isolation material there-between. The trench isolation material comprises dielectric projections extending into opposing ends of individual active area regions under an elevationally outermost surface of material of the active area regions. The active area material is elevationally over the dielectric projections. Recessed access gate lines individually extend transversally across the active area regions and extend between the ends of immediately end-to-end adjacent active area regions within the dielectric trench isolation material. Other arrays are disclosed, as are methods.