The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Oct. 14, 2016
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Shinichi Miyatake, Chuo-ku, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); G11C 11/4091 (2006.01); H01L 27/112 (2006.01); G11C 11/4076 (2006.01); G11C 5/02 (2006.01); G11C 7/08 (2006.01); G11C 11/4074 (2006.01); G11C 11/4094 (2006.01); G11C 11/4097 (2006.01);
U.S. Cl.
CPC ...
H01L 27/108 (2013.01); G11C 5/025 (2013.01); G11C 7/08 (2013.01); G11C 11/4074 (2013.01); G11C 11/4076 (2013.01); G11C 11/4091 (2013.01); G11C 11/4094 (2013.01); G11C 11/4097 (2013.01); H01L 27/11286 (2013.01);
Abstract

Some embodiments include apparatus and methods using a first diffusion region, a second diffusion region, a third diffusion region, and a fourth diffusion region; a first channel region located between a portion of the first diffusion region and a portion of the third diffusion region; a second channel region located between the portion of the third diffusion region and a portion of the second diffusion region; a third channel region located between the portion of the second diffusion region and a portion of the fourth diffusion region; and a gate located over the first, second, and third channel regions. The first and second diffusion regions are located on a first side of the gate. The third and fourth diffusion regions are located on a second side of the gate opposite from the first side.


Find Patent Forward Citations

Loading…