The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Apr. 13, 2018
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chih Wei Lu, Hsinchu, TW;
Chung-Ju Lee, Hsinchu, TW;
Chien-Hua Huang, Miaoli County, TW;
Hsiang-Ku Shen, Hsinchu, TW;
Zhao-Cheng Chen, New Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device includes a first gate stack over an insulator, a second gate stack over an active region, a first dielectric layer over the first and second gate stacks, a second dielectric layer over the first dielectric layer, and a metal layer over the first and second gate stacks. The first and second dielectric layers include different materials. The metal layer contacts the second gate stack by penetrating at least the first and second dielectric layers and is isolated from the first gate stack by at least the first and second dielectric layers.