The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Feb. 28, 2017
Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventors:

Boxiu Cai, Shanghai, CN;

Yi Huang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 23/544 (2006.01); G02B 5/18 (2006.01); H01L 21/3065 (2006.01); G03F 7/20 (2006.01); G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); G02B 5/1823 (2013.01); G02B 5/1857 (2013.01); G03F 7/20 (2013.01); G03F 9/708 (2013.01); G03F 9/7076 (2013.01); H01L 21/3065 (2013.01); H01L 21/3085 (2013.01); H01L 21/3086 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method is provided for fabricating a photolithography alignment mark structure. The method includes providing a substrate; forming a first grating, a second grating, a third grating and a fourth grating in the substrate; forming a photoresist layer on a surface of the substrate; obtaining a first alignment center along a first direction and a second alignment center alone a second direction based on the first grating and the fourth grating, respectively; providing a mask plate having a fifth grating pattern and a sixth grating pattern; aligning the mask plate with the substrate by using the first alignment center as an alignment center along the first direction and the second alignment center as an alignment center along the second direction; reproducing the fifth grating pattern and the sixth grating pattern in the photoresist layer; and forming a fifth grating and a sixth grating on the substrate by removing a portion of photoresist layer.


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