The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Apr. 09, 2015
Texas Instruments Incorporated, Dallas, TX (US);
Binghua Hu, Plano, TX (US);
Sameer Pendharkar, Allen, TX (US);
Guru Mathur, Plano, TX (US);
Takehito Tamura, Ichikawa, JP;
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
Forming a semiconductor structure by forming a plurality of trenches in a semiconductor material, forming a plurality of non-conductive structures in the plurality of trenches, and forming a doped region of the first conductivity type. The plurality of trenches are spaced apart from each other, have substantially equal depths, and include a first trench and a second trench. The plurality of non-conductive structures include a first non-conductive structure in the first trench and a second non-conductive structure in the second trench. The doped region is formed between the first non-conductive structure and the second non-conductive structure. No region of a second conductivity type lies horizontally in between the first non-conductive structure and the second non-conductive structure.