The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Mar. 11, 2015
Osaka University, Suita-shi, JP;
Toho Engineering Co., Ltd., Yokkaichi-shi, JP;
OSAKA UNIVERSITY, Suita-shi, JP;
TOHO ENGINEERING CO., LTD., Yokkaichi-shi, JP;
Abstract
There are provided a processing method for a wide-bandgap semiconductor substrate and an apparatus therefor that use no abrasives or no abrasive grains, or no solution having a large environmental burden at all, can process a single crystal, which is SiC, GaN, AlGaN, or AlN, at a variety of processing speed, can obtain a surface of higher quality than the quality of a surface finished by CMP, and also have an excellent compatibility with a clean room. A catalytic substance having a function of promoting the direct hydrolysis of a work piece () or promoting the hydrolysis of an oxide film on the surface of the work piece is used as a processing reference plane (). In the presence of water (), the work piece is brought into contact with or extremely close to the processing reference plane at a predetermined pressure.