The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Oct. 16, 2017
Applicant:
Synopsys, Inc., Mountain View, CA (US);
Inventors:
Chun Jian, San Jose, CA (US);
Larry Wang, San Jose, CA (US);
Assignee:
Synopsys, Inc., Mountain View, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/16 (2006.01); G11C 17/18 (2006.01); H01L 27/112 (2006.01);
U.S. Cl.
CPC ...
G11C 17/16 (2013.01); G11C 17/18 (2013.01); H01L 27/112 (2013.01); H01L 27/11206 (2013.01);
Abstract
An integrated circuit OTP memory cell has a programming element with enhanced programmability. The programming element has a doped region at the surface of a semiconductor substrate and a conducting layer partially extending over a surface of the semiconductor surface and along a boundary of the doped region. The conducting layer is displaced from the surface of the doped region and the semiconductor substrate by a thin oxide layer. The partially extending conducting layer provides locations to concentrate electric fields and rupture the gate oxide layer during programming.