The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Oct. 02, 2015
Applicant:
Mitsubishi Gas Chemical Company, Inc., Chiyoda-ku, JP;
Inventors:
Toshiyuki Oie, Tokyo, JP;
Kenji Shimada, Tokyo, JP;
Assignee:
MITSUBISHI GAS CHEMICAL COMPANY, INC., Chiyoda-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
C11D 7/26 (2006.01); C11D 11/00 (2006.01); C11D 7/04 (2006.01); C11D 17/08 (2006.01); G03F 7/42 (2006.01); C11D 7/06 (2006.01); C11D 7/10 (2006.01); C11D 7/32 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
C11D 11/0047 (2013.01); C11D 7/04 (2013.01); C11D 7/06 (2013.01); C11D 7/10 (2013.01); C11D 7/105 (2013.01); C11D 7/3209 (2013.01); C11D 17/08 (2013.01); G03F 7/42 (2013.01); H01L 21/0206 (2013.01); H01L 21/02063 (2013.01); H01L 21/31133 (2013.01);
Abstract
According to the present invention, it is possible to provide a cleaning method for removing a photoresist and dry etching residue on a surface of a semiconductor element having a low-k film and a material that contains 10 atom % or more of tantalum, wherein the cleaning method is characterized by using a cleaning solution that contains 0.002-50 mass % of hydrogen peroxide, 0.001-1 mass % of an alkaline earth metal compound, an alkali, and water.