The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Sep. 26, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chia-Hua Chu, Zhubei, TW;

Chun-Wen Cheng, Zhubei, TW;

Te-Hao Lee, Taipei, TW;

Chung-Hsien Lin, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 41/047 (2006.01); H01L 41/113 (2006.01); H01L 41/187 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0054 (2013.01); B81C 1/00238 (2013.01); B81B 2201/0235 (2013.01); B81B 2203/0307 (2013.01); B81B 2203/04 (2013.01); B81B 2207/07 (2013.01);
Abstract

A device includes a carrier having a plurality of cavities, a micro-electro-mechanical system (MEMS) substrate bonded on the carrier, wherein the MEMS substrate comprises a first side bonded on the carrier, a moving element over a bottom electrode, wherein the bottom electrode is formed of polysilicon and a second side having a plurality of bonding pads and a semiconductor substrate bonded on the MEMS substrate, wherein the semiconductor substrate comprises a top electrode and the first moving element is between the top electrode and the bottom electrode.


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