The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Jul. 20, 2016
Applicant:

Dai Nippon Printing Co., Ltd., Tokyo, JP;

Inventors:

Yoshinori Hirobe, Tokyo, JP;

Yutaka Matsumoto, Tokyo, JP;

Masato Ushikusa, Tokyo, JP;

Toshihiko Takeda, Tokyo, JP;

Hiroyuki Nishimura, Tokyo, JP;

Katsunari Obata, Tokyo, JP;

Takashi Takekoshi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/56 (2006.01); H01L 51/50 (2006.01); B05B 15/04 (2006.01); C23C 14/04 (2006.01); H01L 51/00 (2006.01); B05C 21/00 (2006.01); B32B 37/18 (2006.01); B32B 38/00 (2006.01); B05B 12/22 (2018.01);
U.S. Cl.
CPC ...
B05B 15/0437 (2013.01); B05B 12/22 (2018.02); B05C 21/005 (2013.01); B32B 37/182 (2013.01); B32B 38/0008 (2013.01); C23C 14/042 (2013.01); H01L 51/0011 (2013.01); H01L 51/56 (2013.01); B32B 2310/0843 (2013.01); B32B 2311/00 (2013.01); B32B 2398/00 (2013.01); H01L 51/5012 (2013.01);
Abstract

A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked.


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