The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Feb. 23, 2017
Macronix International Co., Ltd., Hsinchu, TW;
Ying-Chieh Tsai, Hsinchu, TW;
MACROIX International Co., Ltd., Hsinchu, TW;
Abstract
Provided is a semiconductor device including a substrate having a first conductivity type, a first well having a second conductivity type, a first doped region having the first conductivity type, a second well having the second conductivity type, at least one second doped region having the first conductivity type, at least one third doped region having the second conductivity type, and a fourth doped region having the second conductivity type. The first well is located in the substrate. The first doped region is located in the first well. The second well is located in the first well. The second doped region is located in the first doped region. The third doped region is located in the first well at a first side of the first doped region. The fourth doped region is located in the first well at a second side of the first doped region.