The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2018

Filed:

Dec. 01, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Mao-Wei Chiu, Taoyuan, TW;

Ting-Wei Chiang, New Taipei, TW;

Hui-Zhong Zhuang, Kaohsiung, TW;

Li-Chun Tien, Tainan, TW;

Chi-Yu Lu, New Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 21/768 (2006.01); H01L 21/3205 (2006.01); H01L 21/8234 (2006.01); H01L 27/118 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 21/32055 (2013.01); H01L 21/76895 (2013.01); H01L 27/11807 (2013.01); H01L 29/0684 (2013.01); H01L 21/823475 (2013.01); H01L 2027/11875 (2013.01);
Abstract

A cell comprising at least one diffusion region and a plurality of interconnection conductive patterns located over the at least one diffusion layer and comprising a first outer interconnection conductive pattern and a second outer interconnection conductive pattern. The cell further includes at least one different conductive pattern located above the at least one diffusion region and interspersed between the plurality of interconnection conductive patterns. The at least one diffusion region extends in a first direction and the plurality of interconnection conductive patterns and at least one different conductive pattern extend in a second direction substantially perpendicular to the first direction. At least one of the interconnection conductive patterns extends in the second direction substantially perpendicular to the first direction and is long enough to connect to another interconnection conductive pattern on a second cell when the cell abuts the second cell vertically to create at least one routing resource.


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