The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Sep. 02, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chin-Shan Wang, Hsinchu, TW;
Shun-Yi Lee, Zhudong Township, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 21/762 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 21/76224 (2013.01); H01L 23/585 (2013.01);
Abstract
A method of fabricating a semiconductor structure. The method includes forming a dummy structure over a semiconductor body. The method further includes depositing an inter-layer dielectric (ILD) over the semiconductor body. The method further includes removing a dummy material of the dummy structure to form an opening in the ILD. The method further includes filling the opening with a dielectric material to form a dielectric structure. The method further includes stacking a plurality of interconnect elements over the dielectric structure.