The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2018

Filed:

Mar. 09, 2016
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Hiroshi Morikazu, Tokyo, JP;

Noboru Takeda, Tokyo, JP;

Takumi Shotokuji, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); B23K 26/53 (2014.01); H01L 21/67 (2006.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); B23K 26/53 (2015.10); H01L 21/67092 (2013.01); H01L 21/67132 (2013.01); B23K 2203/56 (2015.10);
Abstract

A single-crystal substrate having a film deposited on a surface thereof is processed to divide the single-crystal substrate along a plurality of preset division lines, including a shield tunnel forming step of applying a pulsed laser beam having such a wavelength that permeates through the single-crystal substrate to the single-crystal substrate from a reverse side thereof along the division lines to form shield tunnels, each including a fine hole and an amorphous region shielding the fine hole, in the single-crystal substrate along the division lines, a film removing step of removing the film deposited on the single-crystal substrate along the division lines, and a dividing step of exerting an external force on the single-crystal substrate to which the shield tunnel forming step and the film removing step are performed to divide the single-crystal substrate along the division lines along which the shield tunnels have been formed.


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