The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Jan. 19, 2016
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
MICRON TECHNOLOGY, INC., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 23/522 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/7681 (2013.01); H01L 21/76816 (2013.01); H01L 23/5226 (2013.01); H01L 27/2445 (2013.01); H01L 27/2463 (2013.01); H01L 45/06 (2013.01); H01L 45/065 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/16 (2013.01); H01L 45/1675 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Methods and structures provide horizontal conductive lines of fine pitch and self-aligned contacts extending from them, where the contacts have at least one dimension with a more relaxed pitch. Buried hard mask materials permit self-alignment of the lines and contacts without a critical mask, such as for word-line electrode lines and word-line contacts in a memory device.