The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10157766 B1

Date of Patent:

Dec. 18, 2018

Filed:

Mar. 19, 2014

Method of fabricating a semiconductor device

Applicants:

Un-byoung Kang, Hwaseong-si, KR;

Joonsik Sohn, Yongin-si, KR;

Jung-seok Ahn, Seoul, KR;

Chungsun Lee, Anyang-si, KR;

Taeje Cho, Yongin-si, KR;

Inventors:

Un-Byoung Kang, Hwaseong-si, KR;

Joonsik Sohn, Yongin-si, KR;

Jung-Seok Ahn, Seoul, KR;

Chungsun Lee, Anyang-si, KR;

Taeje Cho, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Thanh T Nguyen

Int. Cl.

CPC ...

H01L 21/683 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 21/78 (2006.01); H01L 23/544 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01);

U.S. Cl.

CPC ...

H01L 21/6836 (2013.01); H01L 21/48 (2013.01); H01L 21/4853 (2013.01); H01L 21/56 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 21/76898 (2013.01); H01L 21/78 (2013.01); H01L 23/544 (2013.01); H01L 24/16 (2013.01); H01L 24/92 (2013.01); H01L 24/94 (2013.01); H01L 24/97 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 21/563 (2013.01); H01L 24/02 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 24/13 (2013.01); H01L 24/17 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01); H01L 2223/5446 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/92 (2013.01); H01L 2224/92125 (2013.01); H01L 2224/94 (2013.01); H01L 2224/97 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06582 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/18161 (2013.01);

Abstract

Provided are methods of fabricating a semiconductor device. According to the method, a first glue layer, a first release layer, a second glue layer, and a second release layer may be sequentially interposed between a carrier and a device wafer. All of the first glue layer, the first release layer, the second glue layer, and the second release layer may be formed of thermosetting resin.

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