The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Nov. 08, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
National Taiwan University, Taipei, TW;
Meng-Yu Lin, New Taipei, TW;
Shih-Yen Lin, Tainan, TW;
Si-Chen Lee, Taipei, TW;
Samuel C. Pan, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Abstract
Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.