The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Oct. 23, 2017
Headway Technologies, Inc., Milpitas, CA (US);
Ruhang Ding, Pleasanton, CA (US);
Yewhee Chye, Hayward, CA (US);
Wenyu Chen, San Jose, CA (US);
Kunliang Zhang, Fremont, CA (US);
Yan Wu, Cupertino, CA (US);
Min Li, Fremont, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
A process flow is disclosed for forming a MR sensor having an antiferromagnetic (AFM) layer recessed behind a bottom shield to reduce reader shield spacing and improve pin related noise. An AP/AFM coupling layer/APstack that extends from an air bearing surface to the MR sensor backside is formed above the AFM layer. The APlayer is pinned by the AFM layer, and the APlayer serves as a reference layer to an overlying free layer during a read operation. The APand APlayers have improved resistance to magnetization flipping because back portions thereof have a full cross-track width 'w' between MR sensor sides thereby enabling greater pinning strength from the AFM layer. Front portions of the AP/APlayers lie under the free layer and have a track width less than 'w'. The bottom shield may have an anti-ferromagnetic coupling structure.