The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Jan. 04, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Sang-Uhn Cha, Yongin-si, KR;
Hoi-Ju Chung, Yongin-si, KR;
Ye-Sin Ryu, Seoul, KR;
Seong-Jin Cho, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A semiconductor memory device includes a memory cell array, a control logic circuit, and an error correction circuit. The control logic circuit generates control signals by decoding a command. The control logic circuit, in a write mode of the semiconductor memory device, controls the error correction circuit to read a first unit of data from a selected sub-page and to generate a first parity data based on one of the first sub unit of data and the second sub unit of data and a main data to be written into the sub-page while generating syndrome data by performing an error correction code decoding on the first unit of data. The error correction circuit, when a first sub unit of data includes at least one error bit, selectively modifies the first parity data based on a data mask signal associated with the main data.