The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Jan. 25, 2017
Asia Pacific Microsystems, Inc., Hsinchu, TW;
ASIA PACIFIC MICROSYSTEMS, INC., Hsinchu, TW;
Abstract
A piezoresistive pressure sensor includes a substrate and a silicon device layer. The substrate has a cavity. The silicon device layer includes a diaphragm and a support element. A top surface of the diaphragm is connected to a top surface of the support element by one or more side surfaces. A recess of the silicon device layer is defined by the top surface of the diaphragm and the one or more side surfaces. A plurality of piezoresistive regions are on the top surface of the diaphragm, on the one or more side surfaces and on the top surface of the support element. A plurality of conductive regions are on the top surface of the support element. The plurality of conductive regions do not extend to the top surface of the diaphragm. The plurality of piezoresistive regions have a first ion dosage concentration. The plurality of conductive regions have a second ion dosage concentration. The second ion dosage concentration is greater than the first ion dosage concentration.