logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10155921 B1

PDFFull Text
Date of Patent:
Dec. 18, 2018

Filed:

Oct. 09, 2014

Removal composition for selectively removing hard mask and methods thereof

Applicant:

Ekc Technology Inc, Hayward, CA (US);

Inventor:

Hua Cui, Castro Valley, CA (US);

Assignees:

E I DUPONT NE NEMOURS AND COMPANY, Wilmington, DE (US);

EKC TECHNOLOGY INC., , CA (US);

Attorney:

Simon L. Xu

Primary Examiner:

Gregory E Webb

Int. Cl.
CPC ...
C09K 13/06 (2006.01); C11D 11/00 (2006.01); G03F 7/42 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); C23F 1/18 (2006.01); C23F 1/26 (2006.01); C23F 1/28 (2006.01); C23F 1/34 (2006.01); C23F 1/38 (2006.01); C23F 1/40 (2006.01); C11D 3/39 (2006.01); C11D 7/26 (2006.01); C11D 7/32 (2006.01); B08B 3/08 (2006.01); C11D 7/04 (2006.01); B08B 3/10 (2006.01); C11D 3/20 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
C11D 11/0047 (2013.01); B08B 3/08 (2013.01); B08B 3/10 (2013.01); C11D 3/2082 (2013.01); C11D 3/3942 (2013.01); C11D 3/3947 (2013.01); C11D 7/04 (2013.01); C11D 7/265 (2013.01); C11D 7/3209 (2013.01); C11D 7/3218 (2013.01); C11D 7/3245 (2013.01); C11D 7/3281 (2013.01); C23F 1/18 (2013.01); C23F 1/26 (2013.01); C23F 1/28 (2013.01); C23F 1/34 (2013.01); C23F 1/38 (2013.01); C23F 1/40 (2013.01); G03F 7/423 (2013.01); G03F 7/425 (2013.01); G03F 7/426 (2013.01); H01L 21/02057 (2013.01); H01L 21/02063 (2013.01); H01L 21/31111 (2013.01); H01L 21/32134 (2013.01); H01L 21/76807 (2013.01); H01L 21/76814 (2013.01); H01L 21/31144 (2013.01);
Abstract

The present disclosure relates to a removal composition for selectively removing an hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W relative to low-k dielectric material from a semiconductor substrate. The semiconductor substrate comprises a low-k dielectric material having a TiN, TaN, TiNxOy, TiW, W, Ti or alloy of Ti or W hard mask thereon. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.

Find Patent Forward Citations

Loading…