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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10155903 B1

PDFFull Text
Date of Patent:
Dec. 18, 2018

Filed:

Mar. 21, 2016

Metal etchant compositions and methods of fabricating a semiconductor device using the same

Applicants:

Hyosan Lee, Hwaseong-si, KR;

Yongsun Ko, Suwon-si, KR;

Kyoungseob Kim, Suwon-si, KR;

Kuntack Lee, Suwon-si, KR;

Jihoon Jeong, Suwon-si, KR;

Chen Lin, Ithaca, NY (US);

Christopher K. Ober, Ithaca, NY (US);

Inventors:

Hyosan Lee, Hwaseong-si, KR;

Yongsun Ko, Suwon-si, KR;

Kyoungseob Kim, Suwon-si, KR;

Kuntack Lee, Suwon-si, KR;

Jihoon Jeong, Suwon-si, KR;

Chen Lin, Ithaca, NY (US);

Christopher K. Ober, Ithaca, NY (US);

Assignees:

Samsung Electronics Co., Ltd., , KR;

Cornell University, Ithaca, NY (US);

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Thomas T Pham

Int. Cl.
CPC ...
B44C 1/22 (2006.01); C23F 1/00 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C25F 3/00 (2006.01); C09K 13/08 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); C23F 1/26 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01); C23F 1/18 (2006.01); C23F 1/20 (2006.01);
U.S. Cl.
CPC ...
C09K 13/08 (2013.01); C23F 1/18 (2013.01); C23F 1/20 (2013.01); C23F 1/26 (2013.01); H01L 21/02063 (2013.01); H01L 21/0273 (2013.01); H01L 21/31111 (2013.01); H01L 21/32134 (2013.01); H01L 21/6708 (2013.01); H01L 21/67017 (2013.01); H01L 21/76802 (2013.01); H01L 24/03 (2013.01); H01L 24/11 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05681 (2013.01); H01L 2224/05684 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/20102 (2013.01); H01L 2924/20103 (2013.01); H01L 2924/20104 (2013.01);
Abstract

The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.

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