The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Jul. 27, 2017
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Eugene P. Marsh, Boise, ID (US);
Jun Liu, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/085 (2013.01); H01L 45/08 (2013.01); H01L 45/124 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/1253 (2013.01); H01L 45/1266 (2013.01); H01L 45/14 (2013.01); H01L 45/143 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/16 (2013.01); H01L 45/1683 (2013.01);
Abstract
Resistive memory having confined filament formation is described herein. One or more method embodiments include forming an opening in a stack having a silicon material and an oxide material on the silicon material, and forming an oxide material in the opening adjacent the silicon material, wherein the oxide material formed in the opening confines filament formation in the resistive memory cell to an area enclosed by the oxide material formed in the opening.