The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Dec. 22, 2017
Applicant:
Silanna Uv Technologies Pte Ltd, Singapore, SG;
Inventors:
Petar Atanackovic, Henley Beach South, AU;
Matthew Godfrey, Sydney, AU;
Assignee:
Silanna UV Technologies Pte Ltd, Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 27/15 (2006.01); H01L 33/10 (2010.01); H01L 33/14 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01); H01L 33/18 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 21/0242 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/02458 (2013.01); H01L 21/02472 (2013.01); H01L 21/02483 (2013.01); H01L 21/02507 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 27/15 (2013.01); H01L 33/007 (2013.01); H01L 33/10 (2013.01); H01L 33/14 (2013.01); H01L 33/16 (2013.01); H01L 33/18 (2013.01); H01L 33/32 (2013.01);
Abstract
Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.