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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10153361 B1

PDFFull Text
Date of Patent:
Dec. 11, 2018

Filed:

Nov. 23, 2016

Heterojunction bipolar transistor device integration schemes on a same wafer

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Renata A. Camillo-Castillo, Williston, VT (US);

Vibhor Jain, Essex Junction, VT (US);

Qizhi Liu, Lexington, MA (US);

Anthony K. Stamper, Burlington, VT (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:

Michael Le Strange

Andrew M. Calderon

Roberts Mlotkowski Safran Cole & Calderon, P.C.

Primary Examiner:

Bradley K Smith

Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 21/8222 (2006.01); H01L 21/02 (2006.01); H01L 21/268 (2006.01); H01L 21/324 (2006.01); H01L 27/082 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/167 (2006.01); H01L 29/66 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7375 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02675 (2013.01); H01L 21/268 (2013.01); H01L 21/324 (2013.01); H01L 21/8222 (2013.01); H01L 27/0823 (2013.01); H01L 27/0825 (2013.01); H01L 29/04 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/167 (2013.01); H01L 29/66242 (2013.01); H01L 29/7371 (2013.01); H03F 3/21 (2013.01); H03F 2200/294 (2013.01);
Abstract

The present disclosure generally relates to semiconductor structures and, more particularly, to heterojunction bipolar transistor device integration schemes on a same wafer and methods of manufacture. The structure includes: a power amplifier (PA) device comprising a base, a collector and an emitter on a wafer; and a low-noise amplifier (LNA) device comprising a base, a collector and an emitter on the wafer, with the emitter having a same crystalline structure as the base.

Find Patent Forward Citations

Camillo-Castillo, Renata. (2018). Heterojunction bipolar transistor device integration schemes on a same wafer (U.S. Patent No. 10153361). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10153361

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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