The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Aug. 28, 2017
Nxp Usa, Inc., Austin, TX (US);
Ganming Qin, Chandler, AZ (US);
Vishnu Khemka, Chandler, AZ (US);
Tanuj Saxena, Tempe, AZ (US);
Moaniss Zitouni, Gilbert, AZ (US);
Raghuveer Vankayala Gupta, Austin, TX (US);
Mark Edward Gibson, Austin, TX (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A method for manufacturing a super junction power MOSFET includes forming a first trench in a substrate, forming a first oxide layer over the substrate and in the bottom and along sidewalls of the trench, depositing electrically conductive material in the trench, masking a first portion of the electrically conductive material, forming a recessed portion of the electrically conductive material, forming an oxide portion over and in contact with the recessed portion of the electrically conductive material, removing a part of the oxide portion by masking, removing the first oxide layer on the sidewalls while another part of the oxide portion remains in contact with the recessed portion of the electrically conductive material, forming a gate dielectric along exposed sidewalls of the trench, and depositing additional electrically conductive material over the other part of the oxide portion in the trench.