The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Sep. 19, 2017
Infineon Technologies Ag, Neubiberg, DE;
Stephan Voss, Munich, DE;
Alexander Breymesser, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Yvonne Gawlina-Schmidl, Pullach im Isartal, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a common doping region located within a semiconductor substrate of the semiconductor device. The common doping region includes a first portion. A maximal doping concentration within the first portion is higher than 1·10cm. The common doping region includes a second portion. A minimal doping concentration within the second portion is lower than 50% of the maximal doping concentration within the first portion of the common doping region. The common doping region includes a third portion. A minimal doping concentration within the third portion is more than 30% higher than the minimal doping concentration within the second portion. The second portion of the common doping region is located vertically between the first portion of the common doping region and the third portion of the common doping region.