The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Apr. 24, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chi-Yuan Wen, Tainan, TW;
Chien Nan Tu, Kaohsiung, TW;
Ming-Chi Wu, Kaohsiung, TW;
Yu-Lung Yeh, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure, in some embodiments, relates to a method of forming an image sensor integrated chip. The method may be performed by forming an image sensing element within a substrate, and forming an absorption enhancement structure over a back-side of the substrate. The absorption enhancement structure is selectively etched to concurrently define a plurality of grid structure openings and a ground structure opening within the absorption enhancement structure. A grid structure is formed within the plurality of grid structure openings and a ground structure is formed within the ground structure opening. The grid structure extends from over the absorption enhancement structure to a location within the absorption enhancement structure.