The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Feb. 05, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Jun-De Jin, Hsinchu, TW;
Kuan-Chi Tsai, Kaohsiung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/762 (2006.01); H01L 21/84 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H03F 3/193 (2006.01); H03F 3/195 (2006.01); H03F 1/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 21/76283 (2013.01); H01L 21/84 (2013.01); H01L 29/0649 (2013.01); H01L 29/66431 (2013.01); H01L 29/66477 (2013.01); H01L 29/778 (2013.01); H01L 29/78 (2013.01); H03F 1/0205 (2013.01); H03F 3/195 (2013.01); H03F 3/1935 (2013.01); H03F 2200/451 (2013.01);
Abstract
A semiconductor device comprises a substrate and a high-electron-mobility transistor (HEMT). The substrate is formed with a recess. At least a portion of the HEMT is disposed in the recess. A method for manufacturing the semiconductor device is also disclosed. A radio frequency (RF) front-end module that employs the semiconductor device is also disclosed.
Quick Actions:
Jin, Jun-De. (2018). Semiconductor device including a high-electron-mobility transistor (hemt) and method for manufacturing the same (U.S. Patent No. 10153300). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10153300
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile