The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Sep. 05, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Geng-Shuoh Chang, Taipei, TW;
Yung-Tsun Liu, Taipei, TW;
Chun-Sheng Wu, Hsinchu, TW;
Chun-Li Lin, Hsinchu, TW;
Yi-Fang Li, Hemei Township, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 23/64 (2006.01); H01L 23/485 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10855 (2013.01); H01L 23/485 (2013.01); H01L 23/5223 (2013.01); H01L 23/642 (2013.01); H01L 27/10808 (2013.01); H01L 27/10852 (2013.01); H01L 28/60 (2013.01); H01L 28/90 (2013.01); H01L 28/91 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method for forming a semiconductor device is provided. The method includes forming a dielectric layer over a semiconductor substrate and forming a contact plug in the dielectric layer. The method also includes partially removing the contact plug to form a recess over the contact plug. The method further includes forming a capacitor element in the recess.