The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Dec. 17, 2014
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/07 (2006.01); H01L 27/06 (2006.01); H01L 29/16 (2006.01); H01L 29/872 (2006.01); H01L 29/417 (2006.01); H01L 29/778 (2006.01); H01L 21/8252 (2006.01); H01L 21/8258 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0727 (2013.01); H01L 21/8252 (2013.01); H01L 21/8258 (2013.01); H01L 27/0605 (2013.01); H01L 27/0629 (2013.01); H01L 27/0688 (2013.01); H01L 29/1608 (2013.01); H01L 29/41766 (2013.01); H01L 29/7786 (2013.01); H01L 29/872 (2013.01); H01L 29/2003 (2013.01);
Abstract
In an embodiment, a semiconductor device includes a silicon carbide layer comprising a lateral diode, and a Group III nitride based semiconductor device arranged on the silicon carbide layer.