The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Sep. 04, 2017
Applicant:
Toshiba Memory Corporation, Tokyo, JP;
Inventors:
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 23/528 (2006.01); H01L 23/00 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/76828 (2013.01); H01L 21/76831 (2013.01); H01L 21/76846 (2013.01); H01L 21/76873 (2013.01); H01L 21/76874 (2013.01); H01L 21/76877 (2013.01); H01L 21/76898 (2013.01); H01L 23/528 (2013.01); H01L 23/53209 (2013.01); H01L 23/53295 (2013.01); H01L 24/13 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 2224/13025 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposite the first surface, a through via extending through the semiconductor substrate from the first surface to the second surface, a metal layer adjacent an inside surface of the through via, and an insulating film including OH bonds located between the semiconductor substrate and the metal layer, the insulating film having a thickness of 1 μm or less.