The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2018

Filed:

Mar. 26, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Takuji Sako, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/02164 (2013.01);
Abstract

A method of etching a silicon oxide film on a substrate, includes generating reaction products containing moisture by modifying the silicon oxide film by supplying a mixed gas containing a gas containing a halogen element and a basic gas onto the surface of the silicon oxide film and making chemical reaction of the silicon oxide film with the mixed gas, generating different reaction products by modifying the silicon oxide film by supplying the gas containing a halogen element onto an interface between the silicon oxide film and the reaction products and making a chemical reaction on the silicon oxide film with the gas containing a halogen element by using the moisture contained in the reaction products, and heating and removing the reaction products and the different reaction products.


Find Patent Forward Citations

Sako, Takuji. (2018). Etching method and recording medium (U.S. Patent No. 10153172). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10153172

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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