The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2018

Filed:

Mar. 13, 2017
Applicant:

Central Glass Company, Limited, Yamaguchi, JP;

Inventors:

Akiou Kikuchi, Yamaguchi, JP;

Masanori Watari, Yamaguchi, JP;

Kenji Kameda, Toyama, JP;

Shin Hiyama, Toyama, JP;

Yasutoshi Tsubota, Toyama, JP;

Assignee:

CENTRAL GLASS COMPANY, LIMITED, Ube, Yamaguchi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/3065 (2006.01); B08B 5/00 (2006.01); B08B 9/00 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02076 (2013.01); B08B 5/00 (2013.01); B08B 9/00 (2013.01); H01L 21/02046 (2013.01); H01L 21/02049 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/31116 (2013.01); H01L 21/32135 (2013.01); H01L 21/67017 (2013.01); H01L 21/67069 (2013.01); H01L 31/18 (2013.01);
Abstract

An etching fault is suppressed by use of an etching gas containing iodine heptafluoride. Provided is an attached substance removing method of removing an attached substance containing an iodine oxide attached to a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas. Also provided is a dry etching method, including the steps of supplying an etching gas containing an iodine-containing gas into a chamber to perform etching on a surface of a substrate; and after the etching is performed on the surface of the substrate, removing an attached substance containing an iodine oxide attached to a component included in the chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas.


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