The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2018

Filed:

Jun. 17, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yang Yang, Las Gatos, CA (US);

Kartik Ramaswamy, San Jose, CA (US);

Steven Lane, Porterville, CA (US);

Lawrence Wong, Fremont, CA (US);

Shahid Rauf, Pleasanton, CA (US);

Andrew Nguyen, San Jose, CA (US);

Kenneth S. Collins, San Jose, CA (US);

Roger Alan Lindley, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32715 (2013.01); H01J 37/3299 (2013.01); H01J 37/32165 (2013.01); H01J 37/32568 (2013.01);
Abstract

Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.


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