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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10151980 B1

PDFFull Text
Date of Patent:
Dec. 11, 2018

Filed:

Dec. 09, 2015

Method for fine line manufacturing

Applicant:

Atotech Deutschland Gmbh, Berlin, DE;

Inventors:

David Thomas Baron, Gloucestershire, GB;

Sven Lamprecht, Berlin, DE;

Assignee:

Atotech Deutschland GmbH, Berlin, DE;

Attorney:

Renner, Otto, Boisselle & Sklar, LLP

Primary Examiner:

Kathleen Duda

Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/09 (2006.01); G03F 7/095 (2006.01); G03F 7/11 (2006.01); C23C 18/16 (2006.01); C23C 18/18 (2006.01); C23C 18/20 (2006.01); C23C 18/28 (2006.01); C23C 18/30 (2006.01); C23C 18/40 (2006.01); H05K 3/18 (2006.01); H01L 23/15 (2006.01); H01L 21/48 (2006.01); H01L 21/285 (2006.01); H01L 21/288 (2006.01); H05K 3/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2002 (2013.01); C23C 18/1605 (2013.01); C23C 18/1893 (2013.01); C23C 18/2086 (2013.01); C23C 18/285 (2013.01); C23C 18/30 (2013.01); C23C 18/40 (2013.01); G03F 7/091 (2013.01); G03F 7/094 (2013.01); G03F 7/095 (2013.01); G03F 7/11 (2013.01); G03F 7/203 (2013.01); G03F 7/2008 (2013.01); G03F 7/2022 (2013.01); H01L 21/285 (2013.01); H01L 21/288 (2013.01); H01L 21/4846 (2013.01); H01L 23/15 (2013.01); H05K 3/181 (2013.01); H05K 3/184 (2013.01); H05K 3/0082 (2013.01); H05K 2201/0108 (2013.01); H05K 2203/0709 (2013.01); H05K 2203/1407 (2013.01);
Abstract

A novel method for the manufacturing of fine line circuitry on a transparent substrates is provided, the method comprises the following steps in the given order providing a transparent substrate, depositing a pattern of light-shielding activation layer on at least a portion of the front side of said substrate, placing a photosensitive composition on the front side of the substrate and on the pattern of light-shielding activation layer, photo-curing the photosensitive composition from the back side of the substrate with a source of electromagnetic radiation, removing any uncured remnants of the photosensitive composition; and thereby exposing recessed structures and deposition of at least one metal into the thus formed recessed structures whereby a transparent substrate with fine line circuitry thereon is formed. The method allows for very uniform and fine line circuitry with a line and space dimension of 0.5 to 10 μm.

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