The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2018

Filed:

Aug. 04, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Noriaki Fukiage, Nirasaki, JP;

Takeshi Oyama, Nirasaki, JP;

Jun Ogawa, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/455 (2006.01); H01L 21/687 (2006.01); C23C 16/34 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45529 (2013.01); C23C 16/345 (2013.01); C23C 16/45536 (2013.01); C23C 16/45542 (2013.01); C23C 16/45551 (2013.01); C23C 16/52 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02186 (2013.01); H01L 21/02274 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01);
Abstract

A silicon nitride film forming method for forming a silicon nitride film on a substrate to be processed, includes forming a silicon nitride film doped with a predetermined amount of titanium by repeating, a predetermined number of times, forming a silicon nitride film by repeating, a first number of times, a process of causing a silicon source gas to be adsorbed onto the substrate and a process of nitriding the adsorbed silicon source gas with plasma of a nitriding gas, and forming a titanium nitride film by repeating, a second number of times, a process of causing a titanium source gas containing chlorine to be adsorbed onto the substrate and a process of nitriding the adsorbed titanium source gas with the plasma of the nitriding gas.


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