The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2018

Filed:

Jan. 21, 2013
Applicant:

Shengyi Technology Co., Ltd., Guangdong, CN;

Inventors:

Guangbing Chen, Guangdong, CN;

Xianping Zeng, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/03 (2006.01); C08J 5/24 (2006.01); C08K 5/5425 (2006.01); C08K 5/549 (2006.01); C08L 71/12 (2006.01); C08L 83/04 (2006.01); B32B 15/14 (2006.01); B32B 15/20 (2006.01); C08G 65/48 (2006.01); C08K 5/3417 (2006.01); C08K 5/53 (2006.01); C08L 71/00 (2006.01); C08G 77/20 (2006.01); H05K 3/02 (2006.01);
U.S. Cl.
CPC ...
H05K 1/0366 (2013.01); B32B 15/14 (2013.01); B32B 15/20 (2013.01); C08G 65/485 (2013.01); C08J 5/24 (2013.01); C08K 5/3417 (2013.01); C08K 5/53 (2013.01); C08K 5/549 (2013.01); C08K 5/5425 (2013.01); C08L 71/00 (2013.01); C08L 71/12 (2013.01); C08L 71/126 (2013.01); C08L 83/04 (2013.01); H05K 1/0373 (2013.01); B32B 2260/021 (2013.01); B32B 2260/046 (2013.01); B32B 2262/101 (2013.01); B32B 2305/076 (2013.01); B32B 2307/204 (2013.01); B32B 2307/3065 (2013.01); B32B 2457/08 (2013.01); C08G 77/20 (2013.01); H05K 3/022 (2013.01); H05K 2201/012 (2013.01); H05K 2201/0209 (2013.01);
Abstract

Disclosed in the present invention is a resin composition, comprising a modified polyphenylene ether resin and an organic silicon compound containing unsaturated double bonds. Also disclosed is a method for preparing a high-frequency circuit substrate using the resin composition as described above and a high-frequency circuit substrate obtained by the preparation method. The high-frequency circuit substrate of the present invention has a high glass transition temperature, a high thermal decomposition temperature, a high interlayer adhesive force, a low dielectric constant and a low dielectric loss tangent, and is very suitable as a circuit substrate in a high-frequency electronic device.


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