The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2018

Filed:

Sep. 18, 2017
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Masumi Saitoh, Yokkaichi, JP;

Takayuki Ishikawa, Yokkaichi, JP;

Takashi Tachikawa, Yokkaichi, JP;

Marina Yamaguchi, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/085 (2013.01); H01L 27/2481 (2013.01); H01L 45/1233 (2013.01); H01L 45/1266 (2013.01); H01L 45/147 (2013.01); H01L 45/1616 (2013.01); H01L 45/1641 (2013.01);
Abstract

A memory device according to an embodiment includes a first conductive layer, a second conductive layer; and a first metal oxide layer provided between the first conductive layer and the second conductive layer. The first metal oxide layer includes titanium oxide, the first metal oxide layer has a first region and a second region, a mole fraction of anatase titanium oxide in the titanium oxide of the first region is a first mole fraction, and a mole fraction of anatase titanium oxide in the titanium oxide of the second region is a second mole fraction lower than the first mole fraction.


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