The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
Nov. 24, 2015
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Shay Reboh, Sassenage, FR;
Benoit Mathieu, Grenoble, FR;
Abstract
A method of straining a transistor channel zone is provided, including a) forming a plurality of stress blocks based on a material having an intrinsic stress, around a zone based on a semiconducting material in which a transistor channel will be made and on which a transistor gate will be formed, the stress blocks inducing a stress in the zone; b) forming a gate block on the zone, the gate block being disposed between the stress blocks; and c) at least partially removing the stress blocks without removing the gate block, wherein the gate block has a Young's modulus and a thickness such that the stress blocks are at least partially removed in step c) and the induced stress is at least partially maintained in the zone after the stress blocks are at least partially removed.