The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
Jun. 26, 2014
Applicant:
Hewlett Packard Enterprise Development Lp, Houston, TX (US);
Inventors:
Minxian Max Zhang, Palo Alto, CA (US);
Jianhua Yang, Palo Alto, CA (US);
R. Stanley Williams, Portola Valley, CA (US);
Assignee:
Hewlett Packard Enterprise Development LP, Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); H01L 27/0248 (2013.01); H01L 27/2409 (2013.01); H01L 27/2418 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1675 (2013.01);
Abstract
Protective elements are provided for non-volatile memory cells in crossbar arrays in which each memristor is situated at a crosspoint of the array. Each memristor is provided with a protective element. The protective element includes a layer of a first oxide that upon heating converts to a second oxide having a higher resistivity than the first oxide.