The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
Mar. 13, 2017
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Masatoshi Yoshikawa, Seoul, KR;
Shuichi Tsubata, Seoul, KR;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor memory device includes a magnetoresistive element and an insulating layer. The magnetoresistive element includes a first magnetic layer, a nonmagnetic layer, and a second magnetic layer and. The magnetoresistive element is capable of storing data according to a direction of magnetization in the first magnetic layer. The insulating layer covers a side surface of the magnetoresistive element. The first magnetic layer includes a first region and a second region. Each of the first and second regions includes a magnetic material and a nonmagnetic material. A concentration ratio of the nonmagnetic material to the magnetic material is higher in the second region than in the first region.