The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
Aug. 29, 2017
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventors:
Kazunari Fujii, Tokyo, JP;
Toshio Negishi, Yokohama, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); B41J 2/14 (2006.01); H01L 23/522 (2006.01); H01L 23/525 (2006.01); H01L 23/528 (2006.01); B41J 2/045 (2006.01); H01L 27/02 (2006.01); H01L 49/02 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); B41J 2/0458 (2013.01); B41J 2/04541 (2013.01); B41J 2/04543 (2013.01); B41J 2/1433 (2013.01); H01L 23/528 (2013.01); H01L 23/5228 (2013.01); H01L 23/5252 (2013.01); H01L 27/0207 (2013.01); B41J 2002/14491 (2013.01); B41J 2202/13 (2013.01); H01L 28/20 (2013.01); H01L 29/7817 (2013.01);
Abstract
A semiconductor device includes a transistor connected to a terminal having a first potential, an anti-fuse element connected between the transistor and a terminal having a second potential different from the first potential, and a resistor element connected in parallel with the anti-fuse element. An electric path between the transistor and the anti-fuse element has a length smaller than a length of an electric path between the transistor and the resistor element.