The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
Nov. 22, 2017
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, Kanagawa, JP;
Tadashi Watanabe, Yokohama, JP;
Hajime Matsuda, Yokohama, JP;
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC., Kanagawa, JP;
Abstract
A process of forming an epitaxial substrate that includes nitride semiconductor layers is disclosed. The process includes steps of; (a) growing a nucleus forming layer on the substrate, and (b) growing a nitride semiconductor layer on the nucleus forming layer. The step (a) sets first and second growth temperatures in an upstream side and a downstream side, respectively, of the substrate for the flow of the source gases, where the first temperature of the upstream side is at least 5° C. but at most 10° C. lower than the second temperature of the downstream side, and the second temperature is higher than 1100° C.