The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
Sep. 25, 2017
Applicant:
Microsemi Soc Corp., San Jose, CA (US);
Inventor:
Volker Hecht, Barsinghausen, DE;
Assignee:
Microsemi SoC Corp., San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0059 (2013.01); G11C 13/0023 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); G11C 2013/009 (2013.01); G11C 2013/0066 (2013.01); G11C 2213/15 (2013.01); G11C 2213/79 (2013.01);
Abstract
A method for preventing over-programming of resistive random access (ReRAM) based memory cells in a ReRAM memory array includes applying a programming voltage in a programming circuit path including a ReRAM memory cell to be programmed, sensing programming current drawn by the ReRAM cell while the programming voltage is applied across the memory cell, and decreasing the programming current as a function of a rise in programming current.