The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2018

Filed:

Oct. 04, 2016
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Maxim Pisarenco, Son en Breugel, NL;

Richard Quintanilha, Eindhoven, NL;

Markus Gerardus Martinus Maria Van Kraaij, Eindhoven, NL;

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/68 (2006.01); G03F 7/20 (2006.01); G01B 15/00 (2006.01); G01N 23/201 (2018.01);
U.S. Cl.
CPC ...
G03F 7/70625 (2013.01); G01B 15/00 (2013.01); G01N 23/201 (2013.01); G03F 7/705 (2013.01); G01N 2223/501 (2013.01);
Abstract

A structure of interest is irradiated with radiation for example in the x-ray or EUV waveband, and scattered radiation is detected by a detector (). A processor () calculates a property such as linewidth (CD) by simulating interaction of radiation with a structure and comparing the simulated interaction with the detected radiation. A layered structure model () is used to represent the structure in a numerical method. The structure model defines for each layer of the structure a homogeneous background permittivity and for at least one layer a non-homogeneous contrast permittivity. The method uses Maxwell's equation in Born approximation, whereby a product of the contrast permittivity and the total field is approximated by a product of the contrast permittivity and the background field. A computation complexity is reduced by several orders of magnitude compared with known methods.


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