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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10141526 B1

PDFFull Text
Date of Patent:
Nov. 27, 2018

Filed:

Aug. 31, 2016

Peeling method using separating peeling layer and layer to be peeled

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Tatsuya Sakuishi, Kanagawa, JP;

Yutaka Uchida, Kanagawa, JP;

Hiroki Adachi, Tochigi, JP;

Saki Eguchi, Tochigi, JP;

Junpei Yanaka, Tochigi, JP;

Kayo Kumakura, Tochigi, JP;

Seiji Yasumoto, Tochigi, JP;

Kohei Yokoyama, Kanagawa, JP;

Akihiro Chida, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Scott B Geyer

Int. Cl.
CPC ...
H01L 51/00 (2006.01); B32B 7/02 (2006.01); B32B 37/02 (2006.01); B32B 37/18 (2006.01); B32B 38/10 (2006.01); B32B 7/12 (2006.01); B32B 15/08 (2006.01); B32B 15/18 (2006.01); B32B 15/20 (2006.01); B32B 17/00 (2006.01); B32B 27/20 (2006.01); B32B 27/28 (2006.01); B32B 27/30 (2006.01); B32B 27/32 (2006.01); B32B 27/34 (2006.01); B32B 27/36 (2006.01); B32B 7/06 (2006.01); B32B 17/06 (2006.01); B32B 37/10 (2006.01); B32B 37/12 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0097 (2013.01); B32B 7/02 (2013.01); B32B 7/06 (2013.01); B32B 7/12 (2013.01); B32B 15/08 (2013.01); B32B 15/18 (2013.01); B32B 15/20 (2013.01); B32B 17/00 (2013.01); B32B 17/06 (2013.01); B32B 27/20 (2013.01); B32B 27/286 (2013.01); B32B 27/30 (2013.01); B32B 27/325 (2013.01); B32B 27/34 (2013.01); B32B 27/36 (2013.01); B32B 27/365 (2013.01); B32B 37/02 (2013.01); B32B 37/10 (2013.01); B32B 37/18 (2013.01); B32B 38/10 (2013.01); H01L 51/003 (2013.01); B32B 37/1292 (2013.01); B32B 2250/05 (2013.01); B32B 2255/20 (2013.01); B32B 2260/021 (2013.01); B32B 2260/046 (2013.01); B32B 2264/102 (2013.01); B32B 2307/202 (2013.01); B32B 2307/40 (2013.01); B32B 2307/50 (2013.01); B32B 2307/536 (2013.01); B32B 2307/558 (2013.01); B32B 2310/0843 (2013.01); B32B 2315/08 (2013.01); B32B 2457/20 (2013.01); H01L 51/5253 (2013.01); H01L 2251/5338 (2013.01); Y02E 10/549 (2013.01); Y02P 70/521 (2015.11);
Abstract

A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

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