The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Dec. 14, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 23/535 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01); H01L 29/45 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78618 (2013.01); H01L 23/535 (2013.01); H01L 27/0924 (2013.01); H01L 29/0843 (2013.01); H01L 29/0847 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/1608 (2013.01); H01L 29/41725 (2013.01); H01L 29/41766 (2013.01); H01L 29/45 (2013.01);
Abstract
A semiconductor device includes an active fin extended in a first direction on a substrate. A gate structure extends in a second direction, wherein the gate structure intersects the active fin and covers an upper portion of the active fin. A source/drain region is positioned on the active fin adjacent to the gate structure. A silicide layer is on the source/drain region. A contact plug is connected to the source/drain region. A void is present between the silicide layer and the contact plug.