The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Mar. 07, 2016
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Sheng-De Liu, Taoyuan County, TW;
Chung-Yen Chou, Hsinchu, TW;
Shih-Chang Liu, Kaohsiung County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a substrate, a first III-V compound layer over the substrate, a first passivation layer on the first III-V compound layer, a source region and a drain region. The source region penetrates the first passivation layer to electrically contact the first III-V compound layer. The drain region penetrates the first passivation layer to electrically contact the first III-V compound layer. A sidewall of the first passivation layer contacting with the source region comprises a stair shape.