The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Aug. 19, 2015
Steven R. J. Brueck, Albuquerque, NM (US);
Stephen D. Hersee, Cudjoe Key, FL (US);
Seung-chang Lee, Albuquerque, NM (US);
Daniel Feezell, Albuquerque, NM (US);
Steven R. J. Brueck, Albuquerque, NM (US);
Stephen D. Hersee, Cudjoe Key, FL (US);
Seung-Chang Lee, Albuquerque, NM (US);
Daniel Feezell, Albuquerque, NM (US);
STC.UNM, Albuquerque, NM (US);
Abstract
A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.